STD3N95K5AG

The STD3N95K5AG belongs to the category of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) chips, specifically an N-channel Power MOSFET. Here is a detailed description of the STD3N95K5AG chip translated into English:

Basic Information

• Manufacturer: STMicroelectronics
• Package: TO-252 (some information may specify TO-252-3, which could be a specific type or variant of the package)
• FET Type: N-Channel

Key Specifications

• Drain-Source Breakdown Voltage (Vds): 950V
• Continuous Drain Current (Id): 2A
• On-State Drain-Source Resistance (Rds On): 4.3 Ohms (typical)
• Gate-Source Voltage (Vgs): Maximum 30V
• Gate-Source Threshold Voltage (Vgs th): 3V
• Gate Charge (Qg): 3.4 nC
• Minimum Operating Temperature: -55°C
• Maximum Operating Temperature: +150°C
• Power Dissipation (Pd): 45W
• Channel Mode: Enhancement
• Qualification: AEC-Q101 (indicating compliance with the quality standard for automotive electronic components)

Key Features

• High Voltage Capability: Capable of withstanding up to 950V Drain-Source breakdown voltage, suitable for high-voltage applications.
• Low On-Resistance: Offers a low Drain-Source on-resistance when in the on-state, helping to reduce energy losses.
• Fast Switching Characteristics: Features short rise time (13.5 ns), fall time (32.5 ns), turn-on delay time (8.5 ns), and turn-off delay time (20.5 ns), suitable for applications requiring fast switching.
• Automotive Applications: With its AEC-Q101 qualification, the STD3N95K5AG is particularly suited for automotive electronics and other applications requiring high quality and long-term support.

Application Areas

The STD3N95K5AG chip, with its high voltage capability, low on-resistance, and fast switching characteristics, is widely used in automotive electronics, power electronics, industrial control, and other fields. Specifically, it excels in applications requiring high voltage, high current, and high-frequency switching, such as electric vehicle drive systems, power converters, motor control, and more.