MMRF1314HR5 is an RF power transistor manufactured by NXP, specifically designed for high-power RF applications. Here are the detailed specifications of this product:
Basic Parameters
- Product Type: RF MOSFET Transistors (Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors)
- Manufacturer: NXP
- Polarity: N-Channel
- Package: SOT1787
- Technology: LDMOS (Laterally Diffused Metal Oxide Semiconductor)
Electrical Parameters
- Operating Frequency: 1200 to 1400 MHz
- Output Power: 1000 W (Peak)
- Typical Gain (dB): 15.5 dB @ 1200 MHz (Specific gain may vary with frequency)
- Drain-Source Breakdown Voltage (Vds): Not specified directly, but LDMOS transistors generally have high breakdown voltages
- Continuous Drain Current (Id): Not specified directly, but determined by the application and design requirements
- Gate-Source Voltage (Vgs): -6 V to +10 V (Range for controlling gate voltage)
- Power Dissipation (Pd): Not specified directly, but requires good heat dissipation design for high-power applications
Operating Temperature
- Maximum Operating Temperature: +150°C
- Minimum Operating Temperature: -40°C
Application Characteristics
- Broadband Operation: Internal input and output matching for convenient broadband operation and usage
- Configuration Flexibility: Can be used in single-ended, push-pull, or quadrature configurations
- High Robustness: Suitable for pulsed applications, particularly excelling in high-power military and commercial L-band radar applications
Additional Information
- Package/Case: SMD/SMT (Surface-Mount Device/Surface-Mount Technology) packaging, suitable for surface-mount technology
- Packing Quantity: Typically packaged in certain quantities (e.g., 50 pieces) per unit
