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Category :Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :3.9V @ 200µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :25 nC @ 10 V
Rds On (Max) @ Id, Vgs :950mOhm @ 2.8A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :650 V
Vgs (Max) :±20V
Product Status :Obsolete
Input Capacitance (Ciss) (Max) @ Vds :490 pF @ 25 V
Mounting Type :Through Hole
Series :CoolMOS™
Supplier Device Package :PG-TO220-3-1
Mfr :Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :4.5A (Tc)
Power Dissipation (Max) :50W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :SPP04N
Description :MOSFET N-CH 650V 4.5A TO220-3
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